Cristin-person-ID: 32025
Person

Tine Uberg Nærland

  • Stilling:
    Faglig rådgiver
    ved Institutt for energiteknikk

Resultater Resultater

Is It Possible to Unambiguously Assess the Presence of Two Defects By Temperature- and Injection-Dependent Lifetime Spectroscopy?

Nærland, Tine Uberg; Bernardini, Simone; Wiig, Marie Syre; Bertoni, Mariana. 2018, IEEE Journal of Photovoltaics. ASU, IFEVitenskapelig artikkel

Recent insights into boron-oxygen related degradation: Evidence of a single defect.

Hallam, Brett; Kim, Moonyong; Abbot, Malcolm; Nampalli, Nitin; Nærland, Tine Uberg; Stefani, Bruno; Wenham, Stuart. 2017, Solar Energy Materials and Solar Cells. BRASIL, IFE, UNSWVitenskapelig artikkel

On the recombination centers of iron-gallium pairs in Ga-doped silicon.

Nærland, Tine Uberg; Bernardini, Simone; Haug, Halvard; Grini, Sigbjørn; Vines, Lasse; Stoddard, Nathan; Bertoni, Mariana. 2017, Journal of Applied Physics. USA, ASU, IFE, UIOVitenskapelig artikkel

The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon.

Nærland, Tine Uberg; Bernardini, Simone; Haug, Halvard; Stoddard, Nathan; Bertoni, Mariana. 2016, IEEE Press. USA, ASU, IFEVitenskapelig Kapittel/Artikkel/Konferanseartikkel

Fast and slow lifetime degradation in boron-doped Czochralski silicon described by a single defect.

Hallam, Brett; Abbott, Malcolm; Nærland, Tine Uberg; Wenham, Stuart. 2016, Physica Status Solidi. Rapid Research Letters. ASU, IFE, UNSWVitenskapelig artikkel
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