Cristin-person-ID: 600077
Person

Marianne Etzelmüller Bathen

  • Stilling:
    Forsker
    ved SMN fysikk ved Universitetet i Oslo

Resultater Resultater

Nanostructuring of SiC for novel defect-based quantum technologies.

Selnesaunet, Gard Momrak. 2021, UIOMastergradsoppgave

Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC.

Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej; Vines, Lasse. 2022, Journal of Applied Physics. UIOVitenskapelig artikkel

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.

Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Vines, Lasse. 2021, IDCS31. UIOPoster

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.

Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Enga, Marius; Vines, Lasse. 2021, ANIMMA 2021 Workshop no. 2: Crystalline Materials for Radiation Detection. UIOVitenskapelig foredrag
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