Cristin-resultat-ID: 1155451
Sist endret: 17. september 2014, 14:37
Resultat
Poster
2014

ANALYSIS OF RESIDUAL STRESS AND THERMAL HYSTERESIS IN SPUTTERED ALUMINIUM THIN FILMS

Bidragsytere:
  • Elizaveta Vereshchagina
  • Erik Poppe
  • Kari Schjølberg-Henriksen
  • Vishnukanthan Venkatachalapathy og
  • Sigurd T. Moe

Presentasjon

Navn på arrangementet: Micromechanics Europe 2014
Dato fra: 1. september 2014
Dato til: 3. september 2014

Om resultatet

Poster
Publiseringsår: 2014

Beskrivelse Beskrivelse

Tittel

ANALYSIS OF RESIDUAL STRESS AND THERMAL HYSTERESIS IN SPUTTERED ALUMINIUM THIN FILMS

Sammendrag

This work concerns optimization of properties of aluminium (Al) thin films with respect to residual stress and thermal hysteresis. Controlling residual stress and minimizing the effect of thermal hysteresis is critical in a wide range of MEMS components. Throughout the study we used wafer curvature, White Light Interferometry (WLI), High Resolution Scanning Electron Microscopy(HRSEM), X-Ray Diffraction (XRD) to assess mechanical and microstructural properties of Al thin films as a function of deposition conditions and annealing. The maximum thermal hysteresis in Al was measured to be below 500 MPa. Plastic yielding occurred from ca. 150 oC at a yield compressive stress of 120 MPa. The mean grain size increased from 250 to 850 nm when increasing sputter power from 2 to 9 kW for annealed samples. A significant degree of temperature induced voiding and hillocking was observed on Al surface after annealing at 350oC. Integration of thin films of sputtered Ti and TiW on top of the Al film suppressed the hillock formation and is suggested as a possible solution to minimize thermal hysteresis.

Bidragsytere

Elizaveta Vereshchagina

  • Tilknyttet:
    Forfatter
    ved Microsystems and Nanotechnology ved SINTEF AS

Erik Utne Poppe

Bidragsyterens navn vises på dette resultatet som Erik Poppe
  • Tilknyttet:
    Forfatter
    ved Institutt for elektroniske systemer ved Norges teknisk-naturvitenskapelige universitet

Kari Schjølberg-Henriksen

  • Tilknyttet:
    Forfatter
    ved Microsystems and Nanotechnology ved SINTEF AS

Vishnukanthan Venkatachalapathy

  • Tilknyttet:
    Forfatter
    ved SMN fysikk ved Universitetet i Oslo

Sigurd T. Moe

  • Tilknyttet:
    Forfatter
    ved Microsystems and Nanotechnology ved SINTEF AS
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