Cristin-resultat-ID: 1225853
Sist endret: 25. februar 2015, 07:06
NVI-rapporteringsår: 2014
Resultat
Vitenskapelig artikkel
2014

Weak localization in ZnO:Ga and ZnO:Al thin films

Bidragsytere:
  • O.V Reukova
  • V.G Kytin
  • V.A Kulbachinskii
  • L.I. Burova
  • A.G. Kaul og
  • Alexander Ulyashin

Tidsskrift

Journal of Physics: Conference Series (JPCS)
ISSN 1742-6588
e-ISSN 1742-6596
NVI-nivå 1

Om resultatet

Vitenskapelig artikkel
Publiseringsår: 2014
Volum: 568
Hefte: 052025

Importkilder

Scopus-ID: 2-s2.0-84919608376

Beskrivelse Beskrivelse

Tittel

Weak localization in ZnO:Ga and ZnO:Al thin films

Sammendrag

The temperature dependences of the resistivity, magnetoresistance and the Hall effect of ZnO thin films doped with Ga and Al were investigated at low temperatures. According to obtained experimental data the dimensionality of the investigated films with respect to the weak localization theory changes from 2D to 3D with an increase of magnetic field and temperature. To describe the observed negative magnetoresistance under these conditions we derived a new expression for the weak localization correction to the conductivity. It was found that the obtained expression describes magnetoresistance of investigated films much better than all known expressions for negative magnetoresistence related to weak localization. The values of the electron diffusion length during the phase relaxation time of wave function were obtained by fitting of experimental magnetoresistance with derived expression. Obtained values are consistent with the applied approach.

Bidragsytere

O.V Reukova

  • Tilknyttet:
    Forfatter
    ved Russland

V.G Kytin

  • Tilknyttet:
    Forfatter
    ved Russland

V.A Kulbachinskii

  • Tilknyttet:
    Forfatter
    ved Russland

L.I. Burova

  • Tilknyttet:
    Forfatter
    ved Russland

A.G. Kaul

  • Tilknyttet:
    Forfatter
    ved Russland
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