Cristin-resultat-ID: 1713701
Sist endret: 28. november 2019, 14:32
Resultat
Faglig foredrag
2019

Characterization of active-edge detectors fabricated without support wafer

Bidragsytere:
  • Ozhan Koybasi
  • Angela Kok
  • Anand Summanwar
  • Marco Povoli
  • Lars Breivik
  • Anna Bergamaschi
  • mfl.

Presentasjon

Navn på arrangementet: 21st International Workshop on Radiation Imaging Detectors
Dato fra: 7. juli 2019
Dato til: 12. juli 2019

Om resultatet

Faglig foredrag
Publiseringsår: 2019

Beskrivelse Beskrivelse

Tittel

Characterization of active-edge detectors fabricated without support wafer

Sammendrag

Silicon radiation sensors typically have an inactive volume at the device periphery necessary to accommodate multiple guard-rings and current terminating structures necessary to deliver increased breakdown voltage and stability and to shield the active area from the defects induced by the dicing procedure. The extension of the dead region can be as wide as a few mm, depending on the thickness and resistivity of the wafer as well as on the performance requirements for the sensor. There is a demand in both industrial and scientific communities for “edgeless” silicon radiation sensors where the insensitive edge area is reduced to a minimum. This would allow for the reduction of geometrical inefficiencies and for the seamless tiling of multiple sensors into matrices, to ensure large area coverage without distortions or missing data. The need for “edgeless” detectors has initiated the efforts to engineer the state-of-the-art silicon radiation sensors in order to drastically reduce the dead periphery of the devices. The fabrication of edgeless radiation detector has so far been demonstrated at SINTEF, VTT, and FBK. The “edgeless” feature is realized by etching deep trenches around the active area of the sensor using deep reactive ion etching (DRIE) and by doping the trenches heavily to prevent the depletion region from reaching the damages induced by the etching procedure. In order to maintain the wafer integrity during and after the DRIE process, the device wafer is fusion bonded to a support wafer prior to DRIE, which, for most applications, must be removed after the sensor processing has been completed. The removal of the support wafer is very challenging, making this traditional approach far from ideal for productions with high yield and low cost. At SINTEF we have recently developed a simplified method to fabricate edgeless sensors without the need for a support wafer. This method was conceptualized. Instead of a continuous trench surrounding the active area of the sensor, a segmented trench is created, leaving enough silicon in place to ensure mechanical integrity without the use of a support wafer. We call this approach “perforated” edge (Fig.1). After doping of the trench segments, the unetched material between segments is doped by deep drive-in, thereby effectively forming a fully doped “wall” throughout the entire thickness of sensor. Once the wafer processing is completed, the edgeless sensors can be safely singulated using conventional saw dicing methods. The sensors presented here, were fabricated on 300 µm thick, FZ high resistivity n-type wafers. The electrical characterization was performed using a manual probe station before and after dicing, on 5x5 mm2 edgeless diodes. The full depletion voltage as extracted from C-V measurements is ~45 V. The leakage current at full depletion is

Bidragsytere

Ozhan Koybasi

  • Tilknyttet:
    Forfatter
    ved Microsystems and Nanotechnology ved SINTEF AS

Angela Chun Ying Kok

Bidragsyterens navn vises på dette resultatet som Angela Kok
  • Tilknyttet:
    Forfatter
    ved Microsystems and Nanotechnology ved SINTEF AS

Anand Summanwar

  • Tilknyttet:
    Forfatter
    ved Microsystems and Nanotechnology ved SINTEF AS

Marco Povoli

  • Tilknyttet:
    Forfatter
    ved Microsystems and Nanotechnology ved SINTEF AS

Lars Breivik

  • Tilknyttet:
    Forfatter
    ved Microsystems and Nanotechnology ved SINTEF AS
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