Cristin-person-ID: 1222620
Person

Amanda Langørgen

  • Stilling:
    Stipendiat
    ved Senter for Materialvitenskap og Nanoteknologi fysikk ved Universitetet i Oslo

Resultater Resultater

Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations.

Langørgen, Amanda; Vines, Lasse; Frodason, Ymir Kalmann. 2024, Journal of Applied Physics. UIOVitenskapelig artikkel

A metastable deep defect in beta-Ga2O3.

Langørgen, Amanda; Frodason, Ymir Kalmann; Julie Thue Jensen, Ingvild; Vines, Lasse. 2023, International Conference on Defects in Semiconductors. UIOPoster

Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy.

Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Von Wenckstern, Holger; Jensen, Ingvild Julie Thue; Vines, Lasse; Grundmann, Marius. 2023, Journal of Applied Physics. SINTEF, UL, UIOVitenskapelig artikkel

On the possible nature of deep centers in Ga2O3.

Polyakov, A.Y.; Kochkova, A.I.; Langørgen, Amanda; Vines, Lasse; Vasilev, A.; Shchemerov, I.V.; Romanov, A.A.; Pearton, S.J.. 2023, Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. UIO, UoF, MISISVitenskapelig artikkel

An electron trap in κ-Ga2O3 and the quest for its microscopic origin.

Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Wenckstern, Holger von; Thue Jensen, Ingvild; Vines, Lasse. 2022, Gordon Research Conference on Defects in Semiconductors. UIOPoster
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