The application is systematic theoretical study of boron and phosphorus impurities in silicon nitride used in silicon solar cells as passivation layer, antireflection coating, and barrier material preventing in/out diffusion of impurities. We plan to study the case when B and P are located at N site and stability of the impurities. Furthermore, we plan to estimate formation enthalpy of different polymorphs of silicon nitride and compare them with experimenal results, finalize the computations re
