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Cristin-resultat-ID:
1191968
Sist endret:
22. september 2015, 11:52
NVI-rapporteringsår:
2015
Resultat
Vitenskapelig artikkel
2015
A sub-µW bandgap reference circuit with an inherent curvature-compensation property
Kin Keung Lee
Tor Sverre Lande
og
Philipp Häfliger
Tidsskrift
Tidsskrift
IEEE Transactions on Circuits and Systems I: Regular Papers
ISSN 1549-8328
e-ISSN 1558-0806
NVI-nivå 2
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Om resultatet
Om resultatet
Vitenskapelig artikkel
Publiseringsår: 2015
Publisert online: 2014
Trykket: 2015
Volum: 62
Hefte: 1
Sider: 1 - 9
Lenker
Lenker
original online (doi)
https://doi.org/10.1109/TCSI.2014.2340553
Importkilder
Importkilder
Scopus-ID: 2-s2.0-84921329429
Scopus-ID: 2-s2.0-85027936234
Beskrivelse
Beskrivelse
Engelsk
Tittel
A sub-µW bandgap reference circuit with an inherent curvature-compensation property
Sammendrag
A new current-mode bandgap reference circuit (BGR) which is capable of generating sub-1-V output voltage is presented. It has not only the lowest theoretical minimum current consumption among published current-mode BGRs, but also additional advantages of an inherent curvature-compensation function and not requiring NPN BJTs. The curvature-compensation is achieved by utilizing the exponential behavior of sub-threshold CMOS transistors to compensate the BJT base-emitter voltage high-order temperature dependence. By taking advantages of the continuing development of CMOS technology, sub-µW power consumption is achieved with a reasonable core area. Related design considerations and challenges are discussed and analyzed. The proposed BGR is realized in a TSMC 90 nm process. Measurement results shows a temperature coefficient without trimming as low as 10.1 ppm/°C over a temperature range of 70°C because of the proposed curvature-compensation technique. The average value is 32.6 ppm/°C which could be improved by trimming resistor ratios. The average power consumption at room temperature is 576 nW, with a core area of only 0.028 mm².
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Bidragsytere
Bidragsytere
Kin Keung Lee
Forfatter
ved Forskningsgruppen for nanoelektronikksystemer ved Universitetet i Oslo
Tor Sverre Lande
Forfatter
ved Forskningsgruppen for nanoelektronikksystemer ved Universitetet i Oslo
Philipp Dominik Häfliger
Bidragsyterens navn vises på dette resultatet som Philipp Häfliger
Forfatter
ved Forskningsgruppen for nanoelektronikksystemer ved Universitetet i Oslo
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