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Cristin-resultat-ID:
122398
Sist endret:
21. oktober 2013, 12:14
Resultat
Poster
2000
Modeling of Transient Ionizing Radiation Effects in Bipolar Devices at High Dose-Rates
Tor A Fjeldly
Yanqing Deng
Michael S. Shur
Harold P. Hjalmarson
Arnoldo Muyshondt
og
Trond Ytterdal
Presentasjon
Presentasjon
Navn på arrangementet: RADECS 2000, Radiation Effects on Components and Systems 2000
Sted: Louvain-la-Neuve, Belgia, 11-13 september, 2000
Arrangør:
Arrangørnavn: [Mangler data]
Om resultatet
Om resultatet
Poster
Publiseringsår: 2000
Importkilder
Importkilder
Bibsys-ID: r00025860
Beskrivelse
Beskrivelse
Engelsk
Tittel
Modeling of Transient Ionizing Radiation Effects in Bipolar Devices at High Dose-Rates
Sammendrag
We have developed a dynamic model for photo-electric effect in bipolar devices exposed to a wide range of ionizing radiation intensities. We represent the stationary and dynamic photocurrents by current sources in parallel with each p-n-junction. These sources include the prompt photocurrent of the depletion regions, and the delayed response associated with the build-up and discharge of excess charge carriers in the quasi-neutral (q-n) regions adjacent to the junctions. The latter are described in terms of dynamic delay times for each q-n region, which can be represented by RC equivalent delay circuits. The model has been implemented in the circuit simulator AIM-Spice, and has been verified by numerical simulations.
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Bidragsytere
Bidragsytere
Tor A Fjeldly
Forfatter
ved Institutt for elektroniske systemer ved Norges teknisk-naturvitenskapelige universitet
Yanqing Deng
Forfatter
Michael S. Shur
Forfatter
Harold P. Hjalmarson
Forfatter
Arnoldo Muyshondt
Forfatter
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