Info
Meny
English
Logg inn
Søk etter prosjekter, resultater og personer
Søk etter prosjekter, resultater og personer
Historikk
Cristin-resultat-ID:
1273463
Sist endret:
24. september 2015, 21:18
Resultat
Vitenskapelig artikkel
2006
Development of cost-effective high-density through-wafer interconnects for 3D microsystems
Nicolas Lietaer
Preben Storås
Lars Breivik
og
Sigurd T. Moe
Tidsskrift
Tidsskrift
Journal of Micromechanics and Microengineering (JMM)
ISSN 0960-1317
e-ISSN 1361-6439
NVI-nivå 1
Finn i kanalregisteret
Om resultatet
Om resultatet
Vitenskapelig artikkel
Publiseringsår: 2006
Volum: 16
Hefte: 6 Spesial Issue
Importkilder
Importkilder
SINTEF AS-ID: S302
Beskrivelse
Beskrivelse
Engelsk
Tittel
Development of cost-effective high-density through-wafer interconnects for 3D microsystems
Sammendrag
High-density through-wafer interconnects are of great interest for fabricating real 3D microsystems. A complete solution for realizing through-wafer interconnects is presented. The proposed solution is believed to be cost effective and easy to integrate in a device process flow. A deep reactive ion etch process was developed to etch 20 × 20 µm2 via holes through 300 µm thick silicon wafers. Thermal oxide is used to insulate the vias from the bulk silicon and heavily doped polysilicon is used as the conductor. Aluminum metallization is provided on both sides of the wafer. The electrical resistance of a single through-wafer via is close to 30 Ω.
Vis
fullstendig beskrivelse
Bidragsytere
Bidragsytere
Nicolas Lietaer
Forfatter
ved Smart Sensors and Microsystems ved SINTEF AS
Preben Storås
Forfatter
ved Smart Sensors and Microsystems ved SINTEF AS
Lars Breivik
Forfatter
ved Smart Sensors and Microsystems ved SINTEF AS
Sigurd T. Moe
Forfatter
ved Smart Sensors and Microsystems ved SINTEF AS
1
-
4
av
4