Cristin-resultat-ID: 1787284
Sist endret: 27. mars 2020, 15:22
NVI-rapporteringsår: 2019
Resultat
Vitenskapelig artikkel
2019

Off-eutectic Au-Ge die-attach - Microstructure, mechanical strength, and electrical resistivity

Bidragsytere:
  • Andreas Larsson og
  • Christian Bjørge Thoresen

Tidsskrift

IEEE Transactions on Components, Packaging, and Manufacturing Technology
ISSN 2156-3950
e-ISSN 2156-3985
NVI-nivå 1

Om resultatet

Vitenskapelig artikkel
Publiseringsår: 2019
Volum: 9
Hefte: 12
Sider: 2465 - 2475
Open Access

Importkilder

Scopus-ID: 2-s2.0-85076635936

Beskrivelse Beskrivelse

Tittel

Off-eutectic Au-Ge die-attach - Microstructure, mechanical strength, and electrical resistivity

Sammendrag

In this paper, off-eutectic Au–Ge joints were formed between Si substrates to investigate their high-temperature compatibility. High-quality joints made with small bond pressure, 53 kPa, were fabricated. The joints comprised three different types of morphologies: 1) a layered structure of Au/Au–Ge/Au; 2) a layered structure of Au/Au–Ge/Au where some sections of the central Au–Ge band have been replaced by an Au section that extended across the entire section; and 3) a roughly homogenous Au layer comprising the primary $\alpha $ phase. The average Ge concentration was 10 ± 2 at%. Joints formed with a higher bond line pressure, 7.6 MPa, were of a reduced quality with voids and cracks at the original bond line. Annealing at 400 °C for 1000 h transformed the microstructure into an Au–Ge–Si compound with Au precipitates. The shear strength of the fabricated joints was found to be at least 50 MPa, and the fracture mode was an adhesive fracture between the adhesion layer and the die or substrate. Heated dies detached from the substrates at 460 °C, i.e., more than 100 °C above the eutectic melting point of the binary Au–Ge system. Electrical resistivity measurements confirmed a melting process at the eutectic melting point by an abrupt increase in resistivity.

Bidragsytere

Andreas Larsson

  • Tilknyttet:
    Forfatter
    ved Institutt for mikrosystemer ved Universitetet i Sørøst-Norge
  • Tilknyttet:
    Forfatter
    ved Techni AS

Christian Bjørge Thoresen

  • Tilknyttet:
    Forfatter
    ved Institutt for maritime operasjoner ved Universitetet i Sørøst-Norge
1 - 2 av 2