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Cristin-resultat-ID:
210294
Sist endret:
9. januar 2009, 11:30
Resultat
Vitenskapelig foredrag
2006
Enhancement of Recrystallization Resistance of Al-Zr-Mn by two-step precipitation annealing
Zhihong Jia
Guiqing Hu
Børge Forbord
og
Jan Ketil Solberg
Presentasjon
Presentasjon
Navn på arrangementet: 14th International Conference on the Strength of Materials
Sted: Xi'an
Dato fra:
4. juni 2006
Dato til:
9. juni 2006
Arrangør:
Arrangørnavn: Xi'an Jiaotong Univ. and Inst. of Metal Research, China
Om resultatet
Om resultatet
Vitenskapelig foredrag
Publiseringsår: 2006
Beskrivelse
Beskrivelse
Engelsk
Tittel
Enhancement of Recrystallization Resistance of Al-Zr-Mn by two-step precipitation annealing
Sammendrag
Al3Zr dispersoids formed during precipitation annealing can improve the recrystallization resistance in aluminium alloys. However, the dispersoids often distribute inhomogeneously through the alloys and also is in a low number density. This results in rapid recrystallization in areas where the dispersoid density is low. In this work, two-step heat treatments have been investigated and compared with the more common one-step precipitate annealing. It was found that an effective increase in the number density of Al3Zr dispersoids is achieved when applying a two-step heat treatment. The choice of temperature for the pre-annealing step during the two-step treatment was also found to influence the dispersoid distribution. The best result was obtained when the first annealing was performed at 350ºC before increasing the temperature to 450ºC where precipitation was completed. Increased precipitation resulted in increased recrystallization resistance.
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Bidragsytere
Bidragsytere
Zhihong Jia
Forfatter
ved Institutt for materialteknologi ved Norges teknisk-naturvitenskapelige universitet
Guiqing Hu
Forfatter
ved Institutt for materialteknologi ved Norges teknisk-naturvitenskapelige universitet
Børge Forbord
Forfatter
ved SINTEF AS
Jan Ketil Solberg
Forfatter
ved Institutt for materialteknologi ved Norges teknisk-naturvitenskapelige universitet
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