Sammendrag
A KrF laser was used to ablate a polycrystalline Si target for deposition of Si on MgO and GaAs substrates at room temperature. The deposition was performed in 10−8 mbar, with two types of laser beams: a homogeneous beam being imaged onto the target (2.9 J/cm2), and a non-homogeneous which is nearly focused (2 J/cm2, 6.5 J/cm2). In both cases, the beam was scanned over an area of 1 cm2. For the homogenous beam, we observed only a limited number of droplets (
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