SPICE Modeling of Compound Semiconductor Devices

We review recent advances in the modeling of novel and advanced semiconductor devices, including state-of-the-art MESFET and HFETs, heterodimensional FETs, resonant tunneling devices, and wide-bandgap semiconductor transistors. Weemphasize analytical, physics-based modeling incorporating the important effects present in modern day devices, including deep sub-micrometer devices. Such an approach is needed inorder to accurately describe and predict both stationary and dynamic device behavior and to make the models suitable for implementation in advanced computer aided design tool including circuit simulators such as SPICE.